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General Information
    • ISSN: 2010-3719
    • Frequency: Bimonthly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Associate Executive Editor: Ms. Jennifer Zeng
    • Executive Editor: Mr. Ron C. Wu
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET).
    • E-mail ijiee@ejournal.net

Faculty of Science, University of Brunei Darussalam, Brunei Darussalam   
" It is a great honor to serve as the editor-in-chief of IJIEE. I'll work together with the editorial team. Hopefully, IJIEE will be recognized among the readers in the related field."
IJIEE 2013 Vol.3(6): 563-566 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.379

Measurement and Characterization of FET Devices Using EKV Parameters Applied to POSFET Sensors

Arun Kumar Sinha
Abstract— This paper presents an algorithm to extract the EKV parameters using the input characteristic measurement. The working of the algorithm was verified by extracting a parameter through the pinch-off characteristic measurement. The extraction and measurement was performed on FET devices present in Piezo-Electric Oxide Semiconductor Field Effect Transistor (POSFET) sensor. Using the extracted parameters we fixed the region of operation of this sensor at weak inversion.

Index Terms— Algorithms, flowcharts, piezoelectric semiconductor, semiconductor device measurements.

Arun Kumar Sinha is with the Department of Electrical, Electronic and Telecommunication Engineering, and Naval Architecture, University of Genoa, Genoa, Italy (e-mail: arun.kumar.sinha@unige.it).


Cite: Arun Kumar Sinha, " Measurement and Characterization of FET Devices Using EKV Parameters Applied to POSFET Sensors," International Journal of Information and Electronics Engineering vol. 3, no. 6, pp. 563-566, 2013.

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