— This paper presents an algorithm to extract the EKV parameters using the input characteristic measurement. The working of the algorithm was verified by extracting a parameter through the pinch-off characteristic measurement. The extraction and measurement was performed on FET devices present in Piezo-Electric Oxide Semiconductor Field Effect Transistor (POSFET) sensor. Using the extracted parameters we fixed the region of operation of this sensor at weak inversion.
— Algorithms, flowcharts, piezoelectric semiconductor, semiconductor device measurements.
Arun Kumar Sinha is with the Department of Electrical, Electronic and Telecommunication Engineering, and Naval Architecture, University of Genoa, Genoa, Italy (e-mail: firstname.lastname@example.org).
Cite: Arun Kumar Sinha, " Measurement and Characterization of FET Devices Using EKV Parameters Applied to POSFET Sensors," International Journal of Information and Electronics Engineering vol. 3, no. 6, pp. 563-566, 2013.