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General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET), EBSCO.
    • E-mail ijiee@ejournal.net

University of Brunei Darussalam, Brunei Darussalam   
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IJIEE 2012 Vol.2(5): 682-685 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2012.V2.187

Occupational Stress Level among Information Technology Professionals in Iran

Alireza Bolhari, Ali Rezaeian, Jafar Bolhari, and Sona Bairamzadeh

Abstract—The current research investigated occupational stress among information technology (IT) professionals aiming to measure the level of occupational stress and studying the relationship between occupational stress level of IT professionals and a) gender, b) age, c) work experience and d) stress management courses. The research was conducted among 236 IT professionals. The results suggest that stress reduction programs and strategies are inevitable due to high occupational stress levels. The relationship between stress level and gender, work experience, and stress management courses were approved through path analysis. Finally, implications of the study are discussed in terms of discussion and further research.

Index Terms—Information technology professionals, IT personnel, occupational stress.

A. Bolhari, A. Rezaeean, and S. Bairamzadeh are with the Department of Management, Shahid Beheshti University, Tehran, 1983963113, Iran (phone:+98-912-2170799; e-mail: alireza@bolhari.com, a-rezaeian@sbu.ac.ir,s.bairamzadeh@gmail.com).
J. Bolhari is with Tehran Psychiatric Institute, Tehran University of Medical Sciences, Tehran, 1336616357, Iran (e-mail: bolharij@yahoo.com).


Cite: Alireza Bolhari, Ali Rezaeian, Jafar Bolhari, and Sona Bairamzadeh, "Occupational Stress Level among Information Technology Professionals in Iran," International Journal of Information and Electronics Engineering vol. 2, no. 5, pp. 682-685, 2012.

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