Abstract—Metal oxide based resistance random access memory (RRAM) has been extensively studied as one of the most promising candidate for next generation nonvolatile memory; however the current conduction mechanism is not yet clearly understood. To tackle this problem, low frequency noise behavior in metal oxide based RRAM device has been investigated in this work. Together with DC current voltage characteristics, it confirms that for the low resistance state, current conduction is localized without an area dependence, whereas, for the high resistance state, it is a uniform leakage current throughout the whole device area. This is consistent with the filament type resistive switching phenomenon in such devices.
Index Terms—Current conduction, low frequency noise, resistive switching memory
The authors are with Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore CO 117685 (e-mail: fangz@ime.a-star.edu.sg)
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Cite: Zheng Fang, Xiang Li, Xinpeng Wang, and Patrick Guoqiang Lo, "Area Dependent Low Frequency Noise in Metal Oxide Based Resistive Random Access Memory," International Journal of Information and Electronics Engineering vol. 2, no. 6, pp. 882-884, 2012.
