• Jun 04, 2019 News!IJIEE Vol. 9, No. 2 issue has been published online!   [Click]
  • May 14, 2019 News!Vol.7, No.5-Vol.8, no.2 has been indexed by EI (Inspec).   [Click]
  • Apr 15, 2019 News!Papers published in Vol.8, No.1-No.4 have all received dois from Crossref.
General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET), EBSCO.
    • E-mail ijiee@ejournal.net
Editor-in-chief

 
University of Brunei Darussalam, Brunei Darussalam   
" It is a great honor to serve as the editor-in-chief of IJIEE. I'll work together with the editorial team. Hopefully, The value of IJIEE will be well recognized among the readers in the related field."

IJIEE 2013 Vol.2(6): 882-884 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2012.V2.232

Area Dependent Low Frequency Noise in Metal Oxide Based Resistive Random Access Memory

Zheng Fang, Xiang Li, Xinpeng Wang, and Patrick Guoqiang Lo
Abstract—Metal oxide based resistance random access memory (RRAM) has been extensively studied as one of the most promising candidate for next generation nonvolatile memory; however the current conduction mechanism is not yet clearly understood. To tackle this problem, low frequency noise behavior in metal oxide based RRAM device has been investigated in this work. Together with DC current voltage characteristics, it confirms that for the low resistance state, current conduction is localized without an area dependence, whereas, for the high resistance state, it is a uniform leakage current throughout the whole device area. This is consistent with the filament type resistive switching phenomenon in such devices.

Index Terms—Current conduction, low frequency noise, resistive switching memory

The authors are with Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore CO 117685 (e-mail: fangz@ime.a-star.edu.sg)

[PDF]

Cite: Zheng Fang, Xiang Li, Xinpeng Wang, and Patrick Guoqiang Lo, "Area Dependent Low Frequency Noise in Metal Oxide Based Resistive Random Access Memory," International Journal of Information and Electronics Engineering vol. 2, no. 6, pp. 882-884, 2012.

Copyright © 2008-2019. International Journal of Information and Electronics Engineering. All rights reserved.
E-mail: ijiee@ejournal.net