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General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET), EBSCO.
    • E-mail ijiee@ejournal.net

University of Brunei Darussalam, Brunei Darussalam   
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IJIEE 2013 Vol.3(2): 149-151 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.286

Simulation of Charge Transfer Process in a 2DEG-CCD

M. Aliyari and A. Bozorgmehr

Abstract—This paper describes the modeling and simulation charge transfer process of a 2DEG charge coupled device. We have introduced a new approach to calculate the scattering rate of two-dimensional electron gas in the transport channel of a 2DEG-CCD. This technique was applied to the investigation of the charge transfer process with ensemble Monte Carlo method.

Index Terms—2DEG-CCD, charge signal, Monte Carlo, Transfer efficiency, Transit time.

The authors are with the Department of Electrical Engineering, Shahed University, Tehran, Iran (e-mail: m_ali_yar@yahoo.com,ali110bozorgmehr@yahoo.com


Cite: M. Aliyari and A. Bozorgmehr, "Simulation of Charge Transfer Process in a 2DEG-CCD," International Journal of Information and Electronics Engineering vol. 3, no. 2, pp. 149-151, 2013.

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