Abstract—This paper describes the modeling and simulation charge transfer process of a 2DEG charge coupled device. We have introduced a new approach to calculate the scattering rate of two-dimensional electron gas in the transport channel of a 2DEG-CCD. This technique was applied to the investigation of the charge transfer process with ensemble Monte Carlo method.
Index Terms—2DEG-CCD, charge signal, Monte Carlo, Transfer efficiency, Transit time.
The authors are with the Department of Electrical Engineering, Shahed University, Tehran, Iran (e-mail: firstname.lastname@example.org,email@example.com
Cite: M. Aliyari and A. Bozorgmehr, "Simulation of Charge Transfer Process in a 2DEG-CCD," International Journal of Information and Electronics Engineering vol. 3, no. 2, pp. 149-151, 2013.