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General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET), EBSCO.
    • E-mail ijiee@ejournal.net

University of Brunei Darussalam, Brunei Darussalam   
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IJIEE 2013 Vol.3(4): 432-435 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.351

Frequency Dependence of Noise Performance Metrices for Gate Electrode Work Function Engineered Recessed Channel MOSFET

Ajita Agarwala and Rishu Chaujar

Abstract—This paper discusses the noise assessment, using ATLAS device simulation software, of a gate electrode work function engineered recessed channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, the behavior of GEWE-RC MOSFET is compared with that of a Recessed Channel(RC) MOSFET having the same device parameters. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where device scaling and noise reduction are a major concern. The noise metrics taken into consideration are: minimum noise figure, optimum source impedance and noise conductance. The statistical tools auto correlation and cross correlation are also analysed owing to the random nature of noise.

Index Terms—ATLAS device simulator, correlation, GEWE-RC MOSFET, minimum noise figure, noise conductance, optimum source impedance.

A. Agarwala and R. Chaujar are with the Delhi Technological University, Delhi, India (e-mail: ajitaagarwala90@gmail.com; rishuchaujar@rediffmail.com ).


Cite: Ajita Agarwala and Rishu Chaujar, "Frequency Dependence of Noise Performance Metrices for Gate Electrode Work Function Engineered Recessed Channel MOSFET," International Journal of Information and Electronics Engineering vol. 3, no. 4, pp. 432-435, 2013.

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