Frequency Dependence of Noise Performance Metrices for Gate Electrode Work Function Engineered Recessed Channel MOSFET . International Journal of Information and Electronics Engineering, [S. l.], v. 3, n. 4, p. 432–435, 2013. Disponível em: https://www.ijiee.org/index.php/ijiee/article/view/719. Acesso em: 28 aug. 2026.