Frequency Dependence of Noise Performance Metrices for Gate Electrode Work Function Engineered Recessed Channel MOSFET
Keywords:
ATLAS device simulator, correlation, GEWE-RC MOSFET, minimum noise figure, noise conductance, optimum source impedance.Abstract
This paper discusses the noise assessment, using
ATLAS device simulation software, of a gate electrode work
function engineered recessed channel (GEWE-RC) MOSFET
involving an RC and GEWE design integrated onto a
conventional MOSFET. Furthermore, the behavior of
GEWE-RC MOSFET is compared with that of a Recessed
Channel(RC) MOSFET having the same device parameters.
This paper thus optimizes and predicts the feasibility of a novel
design, i.e., GEWE-RC MOSFET for high-performance
applications where device scaling and noise reduction are a
major concern. The noise metrics taken into consideration are:
minimum noise figure, optimum source impedance and noise
conductance. The statistical tools auto correlation and cross
correlation are also analysed owing to the random nature of
noise.
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