Performance Optimization in Germanium-Based Silicon Photonic Devices Using CMOS-Compatible Stressors
Keywords:
—Germanium, light source, photodetector, silicon photonics, Stressor.Abstract
Germanium (Ge)-based photonic devices are key components for silicon photonics integrated circuits. In this work, strain engineering is employed in these devices for performance optimization. Photoluminescence (PL) emission enhancement was observed for Ge epitaxial films with capping layers using standard CMOS materials. This was attributed to strain, as well as an increase in dopant density in the Ge films. The PL emission peak can either be red- or blue- shifted depending on the type of the capping layer stress. For optical detection, lateral and top stressors were incorporated in Gephotodetectors to achieve red-shifted responsivity roll-off till
1620 nm. These techniques demonstrate how light emission and detection can be optimized in Ge for optical communication
applications.
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