Silicon Photomultiplier with High Photon Detection Efficiency
Keywords:
Silicon photomultiplier, photon detection efficiency, quantum efficiencyAbstract
A new structure of silicon photomultiplier (SiPM) is presented. In this structure, a lateral bulk-Si quenching resistor was introduced to replace poly-Si resistor. Thus, the fill factor of SiPM can be greatly improved. Furthermore, the active region and contact region are separated from each other in the new design, which will help to achieve devices with high quantum efficiency. The expected improvements have been confirmed by numerical simulation. Quite noticeable increase of quantum efficiency, especially at ultra-violet wavelengths, has been observed. The quantum efficiency at 300nm wavelength increases from 20% to 86%. Therefore, SiPM devices with very high photon detection efficiency will be very likely to be achieved.
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