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General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest,  INSPEC (IET), EBSCO, CNKI.
    • E-mail ijiee@ejournal.net
Editor-in-chief

 
University of Brunei Darussalam, Brunei Darussalam   
" It is a great honor to serve as the editor-in-chief of IJIEE. I'll work together with the editorial team. Hopefully, The value of IJIEE will be well recognized among the readers in the related field."

IJIEE 2016 Vol.6(1): 32-36 ISSN: 2010-3719
DOI: 10.18178/ijiee.2016.6.1.589

An Effective Embed Algorithm for Newton Fixed-Point Homotopy Method in MOS Transistor Circuits

Dan Niu, Guorui He, Qingshi Ye, Xiaojun Wang, and Xingpeng Zhou
Abstract— Finding the dc operating points is an important task. Recently, an efficient homotopy method termed the Newton fixed-point homotopy method (NFPH) has been proposed to find the dc operating points of MOS transistor circuits. This method is not only efficient but also globally convergent for any initial point. However, how to effectively implement the proposed MOS NFPH method has been an open problem. In this paper, an effective and practical “Embed” implementation algorithm is proposed for the MOS NFPH method.Numerical examples show that the MOS NFPH method with this proposed “Embed” implementation method is more efficient for finding dc operating points than the conventional MOS ATAN-SH method.

Index Terms— DC operating point, homotopy method, SPICE, circuit simulation.

All authors are with the Key Laboratory of Measurement and Control of Complex Systems of Engineering, Ministry of Education, Southeast University, Nanjing, 210096 China (e-mail: danniu1@163.com).

[PDF]

Cite: Dan Niu, Guorui He, Qingshi Ye, Xiaojun Wang, and Xingpeng Zhou, "An Effective Embed Algorithm for Newton Fixed-Point Homotopy Method in MOS Transistor Circuits," International Journal of Information and Electronics Engineering vol. 6, no. 1, pp. 32-36, 2016.

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