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Editor-in-chief

 
Faculty of Science, University of Brunei Darussalam, Brunei Darussalam   
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IJIEE 2013 Vol.3(6): 590-593 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.385

Effects of the Perhydropolysilazane Spin-on-Dielectric Passivation Buffers on the Reliability of AlGaN/GaN HEMTs

Mustazar Iqbal, Pil-Seok Ko, and Sam-Dong Kim
Abstract— AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a perhydropolysilazane spin-on-dielectric (SOD) buffered structure with the Si3N4 passivation, and the effects of SOD-buffers on high electric field degradation and high temperature stability are investigated. After the high-electric field stresses (high power-state and off-state) applied to the HEMTs, we observe significantly enhanced high-electric field reliability in terms of the DC current collapse (20 and 9 % for high-power state and off-state stress, respectively) from the SOD-buffered structure compared to that of the conventional passivation structure (44 and 18 % for each case). The SOD-buffered structure also shows an improved high temperature stability producing a lower saturation drain current reduction of 49 % than that of the conventional structure (60 %) at 300 oC. It is proposed that the reliability enhancement of SOD-buffered structure is due to the reduction in surface state density at the passivation interface and the suppressed electron trapping.

Index Terms— Current collapse, high-temperature, reliability, SOD-buffer passivation.

Mustazar Iqbal, Pil-Seok Ko, and Sam-Dong Kim are with the Division of Electronics and Electrical Engineering, Dongguk University, 3-26 Pildong Joonggu 100-715 Seoul, Korea (e-mail: engineer.mustazar@gmail.com, kops7665@naver.com, samdong@dongguk.edu).

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Cite: Mustazar Iqbal, Pil-Seok Ko, and Sam-Dong Kim, " Effects of the Perhydropolysilazane Spin-on-Dielectric Passivation Buffers on the Reliability of AlGaN/GaN HEMTs," International Journal of Information and Electronics Engineering vol. 3, no. 6, pp. 590-593, 2013.

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