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General Information
    • ISSN: 2010-3719
    • Frequency: Bimonthly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Associate Executive Editor: Ms. Jennifer Zeng
    • Executive Editor: Mr. Ron C. Wu
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET).
    • E-mail ijiee@ejournal.net

Faculty of Science, University of Brunei Darussalam, Brunei Darussalam   
" It is a great honor to serve as the editor-in-chief of IJIEE. I'll work together with the editorial team. Hopefully, IJIEE will be recognized among the readers in the related field."
IJIEE 2013 Vol.3(1): 24-27 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.257

A 52nW, 18ppm/°C, Voltage Reference Circuit using BJTs and Subthreshold Mosfet

Amit Bansal, M. Kumarasamy Raja, and Je Minkyu
Abstract—A voltage reference circuit which utilizes a pair of BJTs and a MOSFET operating in subthreshold mode is designed in 0.13um CMOS 1P6M process. The proportional to temperature (PTAT) signal is derived using a pair of BJTs, while complementary to temperature (CTAT) signal is realized as gate to source voltage of subthreshold MOSFET. It requires smaller silicon area and is less sensitive to mismatches compared to the conventional bandgap generation circuit. The reference circuit works well from 1.3V to 3.6V. It has temperature stability 18ppm/°C for reference voltage of 1.0V in the temperature range of -40°C to 85°C and it consumes 52nW power.

Index Terms—Voltage reference, low power bandgap voltage circuit, CTAT, PTAT, nano power, subthreshold MOSFET

The authors are with the A*STAR, Institute of Microelectronics, Singapore (e-mail: bansala@ime.a-star.edu.sg)


Cite: Amit Bansal, M. Kumarasamy Raja, and Je Minkyu, "A 52nW, 18ppm/°C, Voltage Reference Circuit using BJTs and Subthreshold Mosfet," International Journal of Information and Electronics Engineering vol. 3, no. 1, pp. 24-27, 2013.

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