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General Information
    • ISSN: 2010-3719 (Online)
    • Abbreviated Title: Int. J. Inf. Electron. Eng.
    • Frequency: Quarterly
    • DOI: 10.18178/IJIEE
    • Editor-in-Chief: Prof. Chandratilak De Silva Liyanage
    • Executive Editor: Jennifer Zeng
    • Abstracting/ Indexing : Google Scholar, Electronic Journals Library, Crossref and ProQuest, Ei (INSPEC, IET), EBSCO.
    • E-mail ijiee@ejournal.net

University of Brunei Darussalam, Brunei Darussalam   
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IJIEE 2013 Vol.3(4): 361-364 ISSN: 2010-3719
DOI: 10.7763/IJIEE.2013.V3.355

Floating-Gate Operational Transconductance Amplifier

Ziad Alsibai

Abstract—A configuration of operational transconductance amplifier (OTA) based on floating-gate MOSFETs for lowpower, low-voltage, and low-frequency applications is presented in this paper. The main features of the proposed OTA are design simplicity and rail to rail input voltage at supply voltage of ±0.5 V. The proposed OTA has high output impedance, good stability, and reduced power consumption of 36 μW. PSpice simulation results using 0.18 μm CMOS technology are presented to prove the results achieved, and in the light of them, the major characteristics of the circuit are manifested.

Index Terms—Floating-gate MOSFET, low voltage, low power, threshold voltage, OTA.

Z. Alsibai is with Brno University of Technology, Kounicova 65, 61600 Brno, Czech Republic (e-mail: xalsib00@stud.feec.vutbr.cz).


Cite: Ziad Alsibai, "Floating-Gate Operational Transconductance Amplifier," International Journal of Information and Electronics Engineering vol. 3, no. 4, pp. 361-364, 2013.

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